The most common variety of JUGFET is the n-channel type. Like the bipolar junction transistor all FETs are three electrode devices the electrodes are the source, the gate and the drain which can be taken as corresponding to the emitter, base and collector respectively. The IGFET has two distinct modes of operation, one known as the depletion mode and the other as thee enhancement mode, again and again each mode subdivides into p-channel and n-channel. The JUGFET can be in two forms, p-channel and n-channel, depending on the type of semiconductor forming the basis of the transistor. Unlike the bipolar junction transistors which are all basically similar in spite of a variety of constructional forms the FET is more a collective term for a family of transistor devise of which there are two principal groups: So these are few differences between FETs and BJTs.
FETs provides thermal stability and generates less noise and high frequency. The power consumption of the FETs are less than BJTs and that’s why they are preferred in many high power applications as well as in the computing applications particularly where the required power consumption should be minimum. For example they are used as amplifier or oscillator in many application and apart from that also used as analogue switch in many application but the biggest difference between the field effect transistor and the BJT is that the input impedance of the field effect transistor is very high and due to that they are used as a buffer amplifier in many applications. FETs does not contain minority carrier therefore they are suitable for switching application because there is no charge store problem. Now in terms of application FETs are used in almost all the applications where the BJTs are used.
#Fet transistor characteristics free#
Field effect transistor is voltage control device.įET is unipolar device which consists of either free electron or holes. And that is why it is known as field effect transistor. So basically in this field effect transistor by controlling the electric field we can control the flow of the current. So the applied voltage generates the electric field within the device and by controlling this electric field or in a way by controlling the voltage we can control the flow of the current through the device. And this can be controlled by applying the voltage between the gate and the source terminal. So in FET the current used to flow between the drain and the source terminal also it is more temperature stable than BJTs and are smaller than BJTs therefore suitable for use in integrated circuits. The drain, gate and source are the three terminals of the FET. In fact today most of the integrated circuits including the computers are designed using the FETs. And it is very useful in many applications. The field effect transistor is three terminals and unipolar because it depends upon on either holes or electrons which use the electric field to control the flow of current through device.
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